Formation of germanium-containing channel region by thermal condensation utilizing an oxygen permeable material

ABSTRACT

A structure including a first semiconductor material portion and a second semiconductor material portion is provided. An oxygen impermeable hard mask is then formed directly on a surface of the first semiconductor material portion. Next, a silicon germanium layer is epitaxially formed on the second semiconductor material portion, but not the first semiconductor material portion. An oxygen permeable hard mask is then formed over the first and second semiconductor material portions. A thermal condensation process is then performed which converts the second semiconductor material portion into a germanium-containing semiconductor material portion. The oxygen permeable hard mask and the oxygen impermeable hard mask are then removed. A functional gate structure can be formed atop the remaining first semiconductor material portion and the thus formed germanium-containing semiconductor material portion.

BACKGROUND

The present application relates to semiconductor device manufacturing,and more particularly, to a method of forming a semiconductor structurecontaining different channel materials within different device regionsof a semiconductor structure.

For more than three decades, the continued miniaturization of metaloxide semiconductor field effect transistors (MOSFETs) has driven theworldwide semiconductor industry. Various showstoppers to continuedscaling have been predicated for decades, but a history of innovationhas sustained Moore's Law in spite of many challenges. However, thereare growing signs today that metal oxide semiconductor transistors arebeginning to reach their traditional scaling limits. Since it has becomeincreasingly difficult to improve MOSFETs and therefore complementarymetal oxide semiconductor (CMOS) performance through continued scaling,further methods for improving performance in addition to scaling havebecome critical.

One challenge facing continued size reduction is developing highperformance MOSFET devices with smaller gate lengths. One approach toincrease performance with smaller gate lengths is to increase thecarrier mobility, i.e., electron and/or hole, in the channel. Althoughit is possible to obtain higher carrier mobilities with strainedsilicon, much higher mobilities can be achieved by using a differentsemiconductor material in the channel other than silicon. For example,hole mobility in silicon germanium (SiGe) is known to be much higherthan in silicon.

In certain technology node device requirements, it may be necessary toprovide a substrate that contains different channel materials in whichn-field effect transistor (nFET) and p-field effect transistor (FET)devices can be formed. For example, enhanced device performance can beobtained by forming an nFET device on a silicon channel material, whileforming a pFET device on a SiGe channel material.

SUMMARY

A structure including a first semiconductor material portion and asecond semiconductor material portion is provided. An oxygen impermeablehard mask is then formed directly on a surface of the firstsemiconductor material portion. Next, a silicon germanium layer isepitaxially formed on the second semiconductor material portion, but notthe first semiconductor material portion. An oxygen permeable hard maskis then formed over the first and second semiconductor materialportions. A thermal condensation process is then performed whichconverts the second semiconductor material portion into agermanium-containing semiconductor material portion. The oxygenpermeable hard mask and the oxygen impermeable hard mask are thenremoved. A functional gate structure can be formed atop the remainingfirst semiconductor material portion and the thus formedgermanium-containing semiconductor material portion. In someembodiments, the functional gate structure formed on the firstsemiconductor material portion is an nFET, while the functional gatestructure formed on the germanium-containing semiconductor materialportion is a pFET.

In one aspect of the present application, a method of forming asemiconductor structure having different channel materials is provided.The method of the present application includes providing a structureincluding a first semiconductor material portion and a secondsemiconductor material portion located on a surface of a substrate. Anoxygen impermeable hard mask is formed directly on a surface of thefirst semiconductor material portion, but not the second semiconductormaterial portion. A silicon germanium layer is epitaxially formeddirectly on a surface of the second semiconductor material portion.Next, an oxygen permeable hard mask is formed over the first and secondsemiconductor material portions. A thermal condensation process is nowperformed. During the thermal condensation process, the secondsemiconductor material portion is converted into a germanium-containingsemiconductor material portion. Following the thermal condensationprocess, the oxygen permeable hard mask and the oxygen impermeable hardmask are removed from the structure.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross sectional view of a first exemplary semiconductorstructure including, from bottom to top, a handle substrate, a buriedinsulator layer and a semiconductor material layer that can be employedin one embodiment of the present application.

FIG. 2 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 1 after forming a first semiconductor material portionand a second semiconductor material portion within the semiconductormaterial layer.

FIG. 3 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 2 after forming an oxygen impermeable hard mask on thefirst semiconductor material portion, but not the second semiconductormaterial portion.

FIG. 4 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 3 after forming an epitaxial SiGe layer directly on anexposed surface of the second semiconductor material portion.

FIG. 5 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 4 after forming an oxygen permeable hard mask.

FIG. 6 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 5 after performing thermal condensation which convertsthe epitaxial SiGe layer into a silicon oxide layer and converts thesecond semiconductor material portion into a germanium-containingsemiconductor material portion.

FIG. 7 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 6 after removing the oxygen permeable hard mask, theoxygen impermeable hard mask and the silicon oxide layer from thestructure.

FIG. 8 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 7 after forming a first functional gate structure onthe first semiconductor material portion and a second functional gatestructure on the germanium-containing semiconductor material portion inaccordance with an embodiment of the present application.

FIG. 9 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 7 after forming a first sacrificial gate structure onthe first semiconductor material portion and a second sacrificial gatestructure on the germanium-containing semiconductor material portion inaccordance with another embodiment of the present application.

FIG. 10 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 9 after forming a spacer on sidewalls of the firstsacrificial gate structure, and the second sacrificial gate structure.

FIG. 11 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 10 after forming a dielectric material having an uppersurface that is coplanar with an upper surface of the first and secondsacrificial gate structures.

FIG. 12 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 11 after removing the first sacrificial gate structureproviding a first gate cavity in the area previously occupied by thefirst sacrificial gate structure and removing the second sacrificialgate structure providing a second gate cavity in the area previouslyoccupied by the second sacrificial gate structure.

FIG. 13 is a cross sectional view of the first exemplary semiconductorstructure of FIG. 12 after forming a first functional gate structure inthe first gate cavity and a second functional gate structure in thesecond gate cavity.

FIG. 14 is a cross sectional view of a second exemplary semiconductorstructure including a first semiconductor fin and a second semiconductorfin on a surface of a substrate in accordance with another embodiment ofthe present application.

FIG. 15 is a cross sectional view of the second exemplary semiconductorstructure of FIG. 14 after forming an oxygen impermeable hard maskstraddling the first semiconductor fin, but not the second semiconductorfin.

FIG. 16 is a cross sectional view of the second exemplary semiconductorstructure of FIG. 15 after forming an epitaxial SiGe layer directly onan exposed surface of the second semiconductor fin.

FIG. 17 is a cross sectional view of the second exemplary semiconductorstructure of FIG. 16 after forming an oxygen permeable hard mask.

FIG. 18 is a cross sectional view of the second exemplary semiconductorstructure of FIG. 17 after performing thermal condensation whichconverts the epitaxial SiGe layer into a silicon oxide layer andconverts the second semiconductor fin into a germanium-containingsemiconductor fin.

FIG. 19 is a cross sectional view of the second exemplary semiconductorstructure of FIG. 18 after removing the oxygen permeable hard mask, theoxygen impermeable hard mask and the silicon oxide layer from thestructure.

FIG. 20 is a cross sectional view of the second exemplary semiconductorstructure of FIG. 19 after forming a first functional gate structurestraddling the first semiconductor fin and a second functional gatestructure straddling the germanium-containing semiconductor fin.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals withthe drawings and various embodiments of the present application.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

As mentioned above, and in certain technology node device requirements,it may be necessary to provide a substrate that contains differentchannel materials in which n-field effect transistor (nFET) and p-fieldeffect transistor (FET) devices can be formed. For example, enhanceddevice performance can be obtained by forming an nFET device on asilicon channel material, while forming a pFET device on a SiGe channelmaterial. In the prior art, such a substrate can be formed by a processin which a SiGe layer is first formed directly on a surface of a siliconsemiconductor material portion. A thermal condensation process can thenbe performed. During the thermal condensation process, germaniummigrates from the SiGe layer downwards into the Si material portion andconverts the Si material portion into a SiGe material portion. Oneproblem with the prior art process is that thermal condensation causesundesired agglomeration of the various semiconductor material portions.The present application provides a method for overcoming theagglomeration problem that is observed utilizing prior art processes.

Notably, the present application overcomes the agglomeration problem byutilizing two different hard masks, e.g., an oxygen impermeable hardmask and an oxygen permeable hard mask. In accordance with the presentapplication, an oxygen impermeable hard mask is formed only atop asemiconductor material portion in which conversion of the semiconductormaterial portion into a germanium-containing semiconductor materialportion is not desired. After forming the oxygen impermeable hard mask,a SiGe layer is formed directly on a surface of a semiconductor materialportion in which conversion into a germanium-containing semiconductormaterial portion is desired. The oxygen impermeable hard mask blocksSiGe epitaxy as well as oxygen diffusion into the semiconductor materialportion. Next, an oxygen permeable hard mask is formed over the entirestructure. A thermal condensation process is then performed. The oxygenimpermeable hard mask that is formed on a surface of the SiGe layerprevents SiGe agglomeration during the thermal condensation processwhile allowing oxygen to diffuse into the semiconductor material portionthat is located directly beneath the SiGe layer.

Referring first FIG. 1, there is illustrated a first exemplarysemiconductor structure including, from bottom to top, a handlesubstrate 10, an insulator layer 12 and a semiconductor material layer14 that can be employed in accordance with an embodiment of the presentapplication. Collectively, the handle substrate 10, the insulator layer12 and the semiconductor material layer 14 may be referred to as asemiconductor-on-insulator (SOI) substrate.

Although the present application is described and illustrated utilizingan SOI substrate, other semiconductor substrates can also be usedincluding, for example, a semiconductor substrate in which handlesubstrate 10 is omitted, or a bulk semiconductor substrate in which theentirety of the semiconductor substrate is comprised of a semiconductormaterial.

In the embodiment illustrated in FIG. 1, the semiconductor materiallayer 14 is present on an uppermost surface of the insulator layer 12.The insulator layer 12 is present on an uppermost surface of the handlesubstrate 10. The handle substrate 10 provides mechanical support to theinsulator layer 12 and the semiconductor material layer 14.

In some embodiments of the present application, the handle substrate 10and the semiconductor material layer 14 of the SOI substrate maycomprise a same semiconductor material. In other embodiments of thepresent application, the handle substrate 10 and the semiconductormaterial layer 14 of the SOI substrate may comprise a differentsemiconductor material. The term “semiconductor” as used herein inconnection with the semiconductor material of the handle substrate 10and the semiconductor material layer 14 denotes any silicon-containingsemiconducting material including, for example, Si, SiGe, SiC, andSiGeC. Multilayers of these silicon-containing semiconductor materialscan also be used as the semiconductor material of the handle substrate10 and the semiconductor material layer 14. In one embodiment, thehandle substrate 10 and the semiconductor material layer 14 are bothcomprised of silicon. In some embodiments, the handle substrate 10 is anon-semiconductor material including, for example, a dielectric materialand/or a conductive material.

The handle substrate 10 and the semiconductor material layer 14 may havethe same or different crystal orientation. For example, the crystalorientation of the handle substrate 10 and/or the semiconductor materiallayer 14 may be {100}, {110}, or {111}. Other crystallographicorientations besides those specifically mentioned can also be used inthe present application. The handle substrate 10 and/or thesemiconductor material layer 14 of the SOI substrate may be a singlecrystalline semiconductor material, a polycrystalline material, or anamorphous material. Typically, at least the semiconductor material layer14 is a single crystalline semiconductor material. In some embodiments,the semiconductor material layer 14 that is located atop the insulatorlayer 12 can be processed to include semiconductor regions havingdifferent crystal orientations.

The insulator layer 12 of the SOI substrate may be a crystalline ornon-crystalline oxide or nitride. In one embodiment, the insulator layer12 is an oxide such as, for example, silicon dioxide. The insulatorlayer 12 may be continuous or it may be discontinuous. When adiscontinuous insulator region is present, the insulator region existsas an isolated island that is surrounded by semiconductor material.

The SOI substrate may be formed utilizing standard processes includingfor example, SIMOX (separation by ion implantation of oxygen) or layertransfer. When a layer transfer process is employed, an optionalthinning step may follow the bonding of two semiconductor waferstogether. The optional thinning step reduces the thickness of thesemiconductor layer to a layer having a thickness that is moredesirable.

The thickness of semiconductor material layer 14 of the SOI substrate istypically from 10 nm to 100 nm, with a thickness from 50 nm to 70 nmbeing more typical. In some embodiments, and when an ETSOI (extremelythin semiconductor-on-insulator) substrate is employed, semiconductormaterial layer 14 of the SOI can have a thickness of less than 10 nm. Ifthe thickness of the semiconductor material layer 14 is not within oneof the above mentioned ranges, a thinning step such as, for example,planarization or etching can be used to reduce the thickness ofsemiconductor material layer 14 to a value within one of the rangesmentioned above. The insulator layer 12 of the SOI substrate typicallyhas a thickness from 1 nm to 200 nm, with a thickness from 100 nm to 150nm being more typical. The thickness of the handle substrate 10 of theSOI substrate is inconsequential to the present application.

The semiconductor material layer 14 may be doped, undoped or containdoped and undoped regions therein. For clarity, the doped regions arenot specifically shown in the drawings of the present application. Eachdoped region within the semiconductor material layer 14 may have thesame, or they may have different conductivities and/or dopingconcentrations. The doped regions that are present in the semiconductormaterial layer 14 can be formed by ion implantation process or gas phasedoping.

Referring now to FIG. 2, there is illustrated the first exemplarysemiconductor structure of FIG. 1 after forming a first semiconductormaterial portion 16L and a second semiconductor material portion 16Rwithin the semiconductor material layer 14. In this embodiment of thepresent application, the first semiconductor material portion 16L andsecond semiconductor material portion 16R are thin planar films locatedon a surface of the insulator layer 12. Although a single firstsemiconductor material portion 16L and a single second semiconductormaterial portion 16R are described and illustrated, a plurality of firstsemiconductor material portions and a plurality of second semiconductormaterial portions can be formed.

In some embodiments of the present application, the first semiconductormaterial portion 16L and the second semiconductor material portion 16Rcan define different semiconductor device regions. For example, thefirst semiconductor material portion 16L can define an area in which ann-field effect transistor can be formed, while the second semiconductormaterial portion 16R can define an area in which a p-field effecttransistor can be formed. The first semiconductor material portion 16Land the second semiconductor material portion 16R comprise a samematerial as the semiconductor material layer 14.

The first semiconductor material portion 16L and the secondsemiconductor material portion 16R can be formed by patterning thesemiconductor material layer 14 by lithography and etching. Lithographycan include forming a photoresist (not shown) on an upper surface of thesemiconductor material layer 14, exposing the photoresist to a desiredpattern of radiation and developing the photoresist utilizing a resistdeveloper. The etching used in forming the first semiconductor materialportion 16L and the second semiconductor material portion 16R mayinclude dry etching (i.e., reactive ion etching, plasma etching, ionbeam etching or laser ablation) and/or a chemical wet etch process. Inone example, HF can be used as a chemical etchant to remove portions ofthe semiconductor material layer 14 that are not protected by apatterned photoresist material. After etching, the patterned photoresistmaterial can be removed utilizing a stripping process such as, forexample, ashing.

The etching provides trenches located adjacent to the firstsemiconductor material portion 16L and the semiconductor materialportion 16R which may expose an upper surface of an underlying material.In the embodiment illustrated in the drawings, each trench will expose aportion of an upper surface of the underlying insulator layer 12. Inother embodiments and when a bulk substrate is used (not shown), eachtrench will expose a portion of the semiconductor material thatconstitutes the bulk semiconductor substrate.

In some embodiments, the trenches may remain unfilled. In otherembodiments, and as illustrated in FIG. 2, each of the trenches may befilled with a trench dielectric material such as, for example, an oxide.Optionally, a liner may be formed in each trench prior to trench fill, adensification step may be performed after the trench fill and aplanarization process may follow the trench fill as well. Each isolationtrench 18 that is formed has an upper surface that is coplanar with anupper surface of the first semiconductor material portion 16L and anupper surface of the second semiconductor material portion 16L. Sidewalledges of some of the trench isolation region 18 directly contactsidewall edges of the first semiconductor material portion 16L andsidewall edges of the second semiconductor material portion 16L.

Referring now to FIG. 3, there is illustrated the first exemplarysemiconductor structure of FIG. 2 after forming an oxygen impermeablehard mask 20 on the first semiconductor material portion 16L, but notthe second semiconductor material portion 16R. The term “oxygenimpermeable” denotes any material in which oxygen does not readilydiffuse therethrough. Notably, an “oxygen impermeable” material refersto a material having an oxygen diffusion rate that does not exceed 50%of the oxygen diffusion rate in silicon oxide formed by thermaloxidation. In one embodiment, the “oxygen impermeable material” has anoxygen diffusion rate that does not exceed 10% of the oxygen diffusionrate in silicon oxide formed by thermal oxidation. In one embodiment ofthe present application, the oxygen impermeable hard mask 20 maycomprise a dielectric nitride such as, for example, silicon nitride. Inother embodiment of the present application, the oxygen impermeable hardmask 20 may comprise tantalum nitride.

The oxygen impermeable hard mask 20 can be formed by first applying ablanket layer of an oxygen impermeable hard mask material to the surfaceof the structure shown in FIG. 2. The oxygen impermeable hard maskmaterial used in providing the oxygen impermeable hard mask 20 can beformed utilizing a deposition process including, for example, chemicalvapor deposition (CVD), plasma enhanced chemical vapor deposition(PECVD), chemical solution deposition, evaporation, or physical vapordeposition (PVD). Alternatively, the oxygen impermeable hard maskmaterial can be formed by a thermal nitridation process. In oneembodiment, the oxygen impermeable hard mask material that is formed hasa thickness from 5 nm to 100 nm. Other thicknesses that are greater thanor lesser than the aforementioned thickness range can also be used forthe thickness of the oxygen impermeable hard mask material. Afterforming the oxygen impermeable hard mask material, the oxygenimpermeable hard mask material is subjected to patterning. That is,lithography and etching can be used in providing the oxygen impermeablehard mask 20.

Referring now to FIG. 4, there is illustrated the first exemplarysemiconductor structure of FIG. 3 after forming an epitaxial SiGe (i.e.,silicon germanium) layer 22 directly on an exposed surface of the secondsemiconductor material portion 16R; no SiGe is formed in contact withthe first semiconductor material portion 16L.

The epitaxial SiGe layer 22 that is formed on the upper surface of thesecond semiconductor material portion 16R has an epitaxial relationshipwith the upper surface of the second semiconductor material portion 16R.That is, epitaxial SiGe layer 22 has a same crystallographic orientationas that of the upper surface of the second semiconductor materialportion 16R. Typically, and as shown in FIG. 4, the epitaxial SiGe layer22 has vertical edges that are vertically coincident, i.e., aligned, tovertical edges of the second semiconductor material portion 16R.

The epitaxial SiGe layer 22 can be formed utilizing any epitaxial growth(or deposition) process. The terms “epitaxial growth and/or deposition”and “epitaxially formed and/or grown” mean the growth of a semiconductormaterial on a deposition surface of a semiconductor material, in whichthe semiconductor material being grown has the same crystallinecharacteristics as the semiconductor material of the deposition surface.In an epitaxial deposition process, the chemical reactants provided bythe source gases are controlled and the system parameters are set sothat the depositing atoms arrive at the deposition surface of thesemiconductor substrate with sufficient energy to move around on thesurface and orient themselves to the crystal arrangement of the atoms ofthe deposition surface. Therefore, an epitaxial semiconductor materialhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.In some embodiments, epitaxial growth and/or deposition processes areselective to forming on semiconductor surface, and do not depositmaterial on dielectric surfaces, such as silicon dioxide or siliconnitride surfaces.

Examples of various epitaxial growth process apparatuses that aresuitable for use in forming the epitaxial SiGe layer 22 of the presentapplication include, e.g., rapid thermal chemical vapor deposition(RTCVD), low-energy plasma deposition (LEPD), ultra-high vacuum chemicalvapor deposition (UHVCVD), atmospheric pressure chemical vapordeposition (APCVD) and molecular beam epitaxy (MBE). The temperature forepitaxial deposition process for forming the epitaxial SiGe layer 22typically ranges from 550° C. to 900° C. Although higher temperaturetypically results in faster deposition, the faster deposition may resultin crystal defects and film cracking.

A number of different source gases may be used for the deposition of theepitaxial SiGe layer 22. In one embodiment, a combination of a siliconsource gas and a germanium source gas can be used in forming the layerof silicon germanium alloy. Examples of silicon source gases that can beused include silane, disilane, trisilane, tetrasilane,hexachlorodisilane, tetrachlorosilane, dichlorosilane, trichlorosilane,methylsilane, dimethylsilane, ethylsilane, methyldisilane,dimethyldisilane, hexamethyldisilane and combinations thereof. Examplesof germanium source gases that can be used include germane, digermane,halogermane, dichlorogermane, trichlorogermane, tetrachlorogermane andcombinations thereof. In some embodiments, a single source gas thatincludes a silicon component and a germanium component may be used informing the epitaxial SiGe layer 22. Carrier gases like hydrogen,nitrogen, helium and argon can be used during the epitaxial growthprocess.

In some embodiments of the present application, the upper surface of theepitaxial SiGe layer 22 is coplanar with the upper surface of the oxygenimpermeable hard mask 20. In other embodiments of the presentapplication, the upper surface of the epitaxial SiGe layer 22 isvertically offset, i.e., located either above or below, the uppersurface of the oxygen impermeable hard mask 20.

In one embodiment of the present application, the epitaxial SiGe layer22 that is formed has a thickness from 3 nm to 100 nm. Other thicknessesthat are below and/or above the aforementioned thickness range can alsobe used as the thickness of the epitaxial SiGe layer 22.

In one embodiment of the present application, the epitaxial SiGe layer22 that is employed in the present application contains from 20 atomicpercent to 80 atomic percent of germanium, and the reminder is comprisedof silicon. In another embodiment of the present application, theepitaxial SiGe layer 22 that is employed in the present applicationcontains from 40 atomic percent to 60 atomic percent of germanium, andthe reminder is comprised of silicon.

Referring now to FIG. 5, there is illustrated the first exemplarysemiconductor structure of FIG. 4 after forming an oxygen permeable hardmask 24. The oxygen permeable hard mask 24 that is formed is acontiguously layer that covers the entirety of the structure shown inFIG. 4. Notably, the oxygen permeable hard mask 24 covers the oxygenimpermeable hard mask 20 and the epitaxial SiGe layer 22. In someembodiments, the oxygen permeable hard mask 24 has an upper surface thatin entirely planar.

The term “oxygen permeable hard mask” is used throughout the presentapplication to denote any material that readily permits oxygen todiffusion therethrough. Notably, an “oxygen permeable” material refersto a material having an oxygen diffusion rate that exceeds 50% of theoxygen diffusion rate in silicon oxide formed by thermal oxidation. Inone embodiment, an “oxygen permeable” material has an oxygen diffusionrate that exceeds 100% of the oxygen diffusion rate in silicon oxideformed by thermal oxidation. In one embodiment of the presentapplication, the oxygen permeable hard mask 24 may comprise a dielectricoxide such as, for example, silicon oxide. In other embodiment of thepresent application, the oxygen permeable hard mask 23 may comprisecarbon or a fluoride doped silicon oxide. In other embodiments, theoxygen permeable hardmask 23 may comprise a low-k material, i.e.,(SiCOH). By “low-k” it is meant a material having a dielectric constantless than the dielectric constant of silicon oxide.

The oxygen permeable hard mask 24 can be formed by applying a blanketlayer of an oxygen permeable capping material to the surface of thestructure shown in FIG. 4. The oxygen permeable capping material used inproviding the oxygen permeable hard mask 24 can be formed utilizing adeposition process including, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD), chemicalsolution deposition, evaporation, physical vapor deposition (PVD),spin-on technique, or any suitable combination of these techniques. Inone example, an oxygen permeable hard mask 24 comprising silicon oxidecan be formed by chemical vapor deposition at a deposition temperatureof from 200° C. to 500° C. In another example, an oxygen permeablehardmask 24 comprises silicon oxide formed by spin-on technique.

In one embodiment, the oxygen permeable hard mask 24 that is formed hasa thickness from 2 nm to 10 nm. Other thicknesses that are greater thanor lesser than the aforementioned thickness range can also be used forthe thickness of the oxygen permeable hard mask 24.

Referring now to FIG. 6, there is illustrated the first exemplarysemiconductor structure of FIG. 5 after performing thermal condensation,i.e., thermal oxidation in which germanium from the epitaxial SiGe layer22 is driven out of the epitaxial SiGe layer and into the secondsemiconductor portion 16R. Since an oxygen impermeable hard mask 20 ispresent on the first semiconductor material portion 16L, the firstsemiconductor material portion 16L remains unchanged. However, and sincean oxygen permeable hard mask 24 is the only material present atop theepitaxial SiGe layer 22, the thermal condensation process converts theepitaxial SiGe layer 22 into a silicon oxide layer 26 and converts thesecond semiconductor material portion 16R into a germanium-containingsemiconductor material portion 17R. It is noted that the presence of theoxygen permeable hard mask 24 atop the epitaxial SiGe layer 22 preventsagglomeration of the first semiconductor material portion 16L and theepitaxial SiGe layer and the second semiconductor portion 16R during thethermal condensation process.

By “germanium-containing semiconductor material portion” it is meant asemiconductor material in which germanium is present. In someembodiments, the diffusion of germanium from the epitaxial SiGe layer 22into the second semiconductor material portion 16R provides the onlysource of germanium being introduced into the second semiconductormaterial portion 16R. Thus, and by way of an example, when the secondsemiconductor material portion 16R comprises silicon, the thermalcondensation process of the present application converts the secondsemiconductor material portion 16R into a SiGe material portion 17L. Insome embodiments, the diffusion of germanium from the epitaxial SiGelayer 22 into the second semiconductor material portion 16R provides anadded germanium content to the second semiconductor material portion16R. In one example, and when the second semiconductor material portion16R comprises silicon germanium, the thermal condensation process of thepresent application converts the second semiconductor material portion16R into a SiGe material portion 17L. In this embodiment, the SiGematerial portion 17L that is formed has a higher content of germaniumthan the original silicon germanium second semiconductor materialportion 16R.

The thermal condensation of the present application is a thermaloxidation process that is performed at temperature sufficient enough tocause diffusion of germanium out of the epitaxial SiGe layer 22 and intothe second semiconductor material portion 16R. In one embodiment of thepresent application, the thermal condensation is performed at atemperature from 700° C. to 1300° C. In another embodiment of thepresent application, the thermal condensation is performed at atemperature from 1000° C. to 1200° C.

Moreover, the thermal condensation of the present application isperformed in an oxidizing ambient which includes at least oneoxygen-containing gas such as O₂, NO, N₂O, ozone, air and other likeoxygen-containing gases. The oxygen-containing gas may be admixed witheach other (such as an admixture of O₂ and NO), or the gas may bediluted with an inert gas such as He, Ar, N₂, Xe, Kr, or Ne.

The thermal condensation process of the present application may becarried out for a variable period of time. In one example, the thermalcondensation process is carried out for a time period from 5 seconds toabout 5 hours, depending on thermal oxidation temperature and oxidationspecies. In another embodiment, the thermal condensation process may becarried out for a time period from 5 minutes to about 30 minutes. Thethermal condensation process of the present application may be carriedout at a single targeted temperature, or various ramp and soak cyclesusing various ramp rates and soak times can be employed.

In some embodiments, the germanium-containing semiconductor materialportion 17R that is formed by the thermal condensation process of thepresent application may have a thickness that is the same as thethickness of the second semiconductor material portion 16R. In otherembodiments of the present application, the germanium-containingsemiconductor material portion 17R that is formed by the thermalcondensation process of the present application may have a thicknessthat is greater than or lesser than the thickness of the secondsemiconductor material portion 16R.

In some embodiments, the silicon oxide layer 26 that is formed by thethermal condensation process of the present application may have athickness that is the same as the thickness of the epitaxial SiGe layer22. In other embodiments of the present application, the silicon oxidelayer 26 that is formed by the thermal condensation process of thepresent application may have a thickness that is greater than or lesserthan the thickness of the epitaxial SiGe layer 22.

Referring now to FIG. 7, there is illustrated the first exemplarysemiconductor structure of FIG. 6 after removing the oxygen permeablehard mask 24, the oxygen impermeable hard mask 20 and the silicon oxidelayer 26 from the structure. After removing the oxygen permeable hardmask 24, the oxygen impermeable hard mask 20 and the silicon oxide layer26 from the structure, an upper surface of the first semiconductormaterial portion 16L and an upper surface of the germanium-containingsemiconductor material portion 17R are exposed.

The removal of the oxygen permeable hard mask 24, the oxygen impermeablehard mask 20 and the silicon oxide layer 26 from the structure may beperformed by a planarization process such as, for example, chemicalmechanical planarization and/or grinding. Alternatively, variouschemical etching process can be used to remove the oxygen permeable hardmask 24, the oxygen impermeable hard mask 20 and the silicon oxide layer26 from the structure.

Referring now to FIG. 8, there is illustrated the first exemplarysemiconductor structure of FIG. 7 after forming a first functional gatestructure 28L on the first semiconductor material portion 16L and asecond functional gate structure 28R on the germanium-containingsemiconductor material portion 17R. In some embodiments of the presentapplication, the first functional gate structure 28L is an nFET, whilethe second functional gate structure 28R is a pFET. In such anembodiment, enhanced performance of the second functional gate structure28R is achieved in the present application since the second functionalgate structure 28R is formed on the germanium-containing semiconductormaterial portion 17R.

The term “functional gate structure” is used throughout the presentapplication as a permanent gate structure used to control output current(i.e., flow of carriers in the channel) of a semiconducting devicethrough electrical or magnetic fields. In some embodiments (not shown),a sacrificial gate structure can be formed instead of at least one ofthe functional gate structures 28L, 28R. In embodiments in which onefunctional gate structure and one sacrificial gate structure are formed,block mask technology can be used in forming the different gatestructures. When a sacrificial gate structure is employed, thesacrificial gate structure can be replaced with a functional gatestructure any time after the source and drain regions have been definedwithin the first semiconductor material portion and/orgermanium-containing semiconductor portion. Such an embodiment will bedescribed in greater detail herein below and in reference to FIGS. 9-13of the present application.

In the embodiment illustrated in FIG. 8, each gate structure is afunctional gate structure 28L, 28R that includes a gate dielectricmaterial portion 30L, 30R and a gate conductor material portion 32L,32L. In some embodiments of the present application, the functional gatestructure 28L has a different conductivity than the functional gatestructure 28R. For example, the functional gate structure 28L may be annFET, while the functional gate structure 28R may be a pFET. Thefunctional gate structures 28L, 28R can be formed by first providing amaterial stack of a gate dielectric material, and a gate conductormaterial. This material stack is then patterned by lithography andetching.

The gate dielectric material that provides the gate dielectric materialportion 30L, 30R of each functional gate structure 28L, 28R can be anoxide, nitride, and/or oxynitride. In one example, the gate dielectricmaterial that provides the gate dielectric material portion 30L, 30R ofeach functional gate structure 28L, 28R can be a high-k material havinga dielectric constant greater than silicon dioxide. Exemplary high-kdielectrics include, but are not limited to, HfO₂, ZrO₂, La₂O₃, Al₂O₃,TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y),Al₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y), LaAlO_(x)N_(y),Y₂O_(x)N_(y), SiON, SiN_(x), a silicate thereof, and an alloy thereof.Each value of x is independently from 0.5 to 3 and each value of y isindependently from 0 to 2. In some embodiments, a multilayered gatedielectric structure comprising different gate dielectric materials,e.g., silicon dioxide, and a high-k gate dielectric can be formed.

In some embodiments, the gate dielectric material portion 30L of thefirst functional gate structure 28L comprises a same gate dielectricmaterial as the gate dielectric material portion 30R of the secondfunctional gate structure 28R. In other embodiments, the gate dielectricmaterial portion 30L of the first functional gate structure 28Lcomprises a different gate dielectric material as the gate dielectricmaterial portion 30R of the second functional gate structure 28R.

The gate dielectric material used in providing the gate dielectricmaterial portions 30L, 30R can be formed by any deposition techniqueincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), physical vapor deposition (PVD),sputtering, or atomic layer deposition. When a different gate dielectricmaterial is used for the gate dielectric material portions, block masktechnology can be used. In one embodiment of the present application,the gate dielectric material used in providing the gate dielectricmaterial portions 30L, 30R can have a thickness in a range from 1 nm to10 nm. Other thicknesses that are lesser than or greater than theaforementioned thickness range can also be employed for the gatedielectric material.

Each gate conductor portion 32L, 32R comprises a gate conductormaterial. In some embodiments, the gate conductor portion 32L of thefirst functional gate structure 28L comprises a same gate conductormaterial as the gate conductor portion 32R of the second functional gatestructure 28R. In other embodiments, the gate conductor portion 32L ofthe first functional gate structure 28L comprises a different gateconductor material as the gate conductor portion 32R of the secondfunctional gate structure 28R.

The gate conductor material used in providing the gate conductormaterial portions 32L, 32R can include any conductive materialincluding, for example, doped polysilicon, an elemental metal (e.g.,tungsten, titanium, tantalum, aluminum, nickel, ruthenium, palladium andplatinum), an alloy of at least two elemental metals, an elemental metalnitride (e.g., tungsten nitride, aluminum nitride, and titaniumnitride), an elemental metal silicide (e.g., tungsten silicide, nickelsilicide, and titanium silicide) or multilayered combinations thereof.

In some embodiments, the gate conductor material portion 32L maycomprise an nFET gate metal, while the gate conductor material portion32R may comprise a pFET gate metal.

The gate conductor material used in providing the gate conductormaterial portions 32L, 32R can be formed utilizing a deposition processincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), physical vapor deposition (PVD),sputtering, atomic layer deposition (ALD) or other like depositionprocesses. When a metal silicide is formed, a conventional silicidationprocess is employed. When a different gate conductor material is usedfor the gate conductor portions, block mask technology can be used. Inone embodiment, the gate conductor material used in providing the gateconductor material portions 32L, 32R of each functional gate structure28L, 28R has a thickness from 1 nm to 100 nm. Other thicknesses that arelesser than or greater than the aforementioned thickness range can alsobe employed for the gate conductor material.

After forming each functional gate structure 28L, 28R and as also shownin FIG. 8, a spacer 34 can be formed on each vertical sidewall of eachfunctional gate structure 28L, 28R and thereafter a source region 36 sand a drain region 36 d can be formed into the first semiconductormaterial portion 16L and the germanium-containing semiconductor portion17R. Each source region 36 s is formed on one side of each functionalgate structure 28L, 28R, while each drain region 36 d is formed onanother side of each functional gate structure 28L, 28R. Thesemiconductor material of the first semiconductor material portion 16Land the germanium-containing semiconductor portion 17 that is locatedbeneath each functional gate structure 28L, 28R and positioned betweenthe source region 36 s and the drain region 36 d is referred as achannel region 38.

The spacer 34 can be formed by first providing a spacer material andthen etching the spacer material. The spacer material may be composed ofany dielectric spacer material including, for example, a dielectricoxide, dielectric nitride, and/or dielectric oxynitride. In one example,the spacer material used in providing the spacer 34 may be composed ofsilicon dioxide or silicon nitride. The spacer material can be providedby a deposition process including, for example, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD), orphysical vapor deposition (PVD). The etching of the spacer material maycomprise a dry etch process such as, for example, a reactive ion etch.

In some embodiments, a source extension region and drain extensionregion (not separately shown) are typically formed prior to forming thespacer 34 utilizing an extension ion implantation process. As such, aportion of each of the source extension region and drain extensionregion would be located beneath the spacer 34 and within the firstsemiconductor material portion 16L and the germanium-containingsemiconductor material portion 17R. After forming the spacer 20, sourceregion 36 s and drain region 36 d are formed utilizing a source/drainion implantation process. An activation anneal may follow theimplantation processes.

Each source region 36 s (including the corresponding source extensionregion) and each drain region 36 d (including the corresponding drainextension region) may be doped with a p-type or n-type dopant. The term“p-type” refers to the addition of impurities to an intrinsicsemiconductor that creates deficiencies of valence electrons. Examplesof p-type dopants, i.e., impurities, include, but are not limited to,boron, aluminum, gallium and indium. “N-type” refers to the addition ofimpurities that contributes free electrons to an intrinsicsemiconductor. Examples of n-type dopants, i.e., impurities, include,but are not limited to, antimony, arsenic and phosphorous. Theconcentration of dopants within the source region 36 s (andcorresponding source extension region) and the drain region 36 d (andthe corresponding drain extension region) can be within ranges typicallyused in forming metal oxide semiconductor field effect transistors(MOSFETs).

Referring now to FIG. 9, there is illustrated the first exemplarysemiconductor structure of FIG. 7 after forming a first sacrificial gatestructure 40L on the first semiconductor material portion 16L and asecond sacrificial gate structure 40R on the germanium-containingsemiconductor material portion 17R in accordance with another embodimentof the present application. The term “sacrificial gate structure” isused throughout the present application to denote a material that servesas a placeholder structure for a functional gate structure to besubsequently formed. Although the embodiment that is illustrated anddescribed herein below contains a sacrificial gate structure on each ofthe first semiconductor material portion 16L and thegermanium-containing semiconductor material portion 17R, it is possibleto form a sacrificial gate structure on one of the first semiconductormaterial portion 16L or the germanium-containing semiconductor materialportion 17R, and form a functional gate structure on the other of thefirst semiconductor material portion 16L or the germanium-containingsemiconductor material portion 17R not including the sacrificial gatestructure. In such an embodiment, block mask technology may be used toform the different gate structures.

In embodiments in which sacrificial gate structures are formed, thesacrificial gate structure 40L, 40R can be formed by first providing ablanket layer of a sacrificial gate material. The blanket layer ofsacrificial gate material can be formed, for example, by chemical vapordeposition or plasma enhanced chemical vapor deposition. The thicknessof the blanket layer of sacrificial gate material can be from 50 nm to300 nm, although lesser and greater thicknesses can also be employed.The blanket layer of sacrificial gate material can include any materialthat can be selectively removed from the structure during a subsequentlyperformed etching process. In one embodiment, the blanket layer ofsacrificial gate material may be composed of polysilicon. In anotherembodiment of the present application, the blanket layer of sacrificialgate material may be composed of a metal such as, for example, Al, W, orCu. After providing the blanket layer of sacrificial gate material, theblanket layer of sacrificial gate material can be patterned bylithography and etching so as to form the sacrificial gate structure.

Referring now to FIG. 10, there is illustrated the first exemplarysemiconductor structure of FIG. 9 after forming a spacer 34 on sidewallsof the first sacrificial gate structure 40L, and the second sacrificialgate structure 40R. The spacer 34 can contain one of the dielectricspacer materials mentioned above and it can be formed utilizing theprocessing as also mentioned above. Prior to forming the spacers 34,source/drain extension regions (not shown) can be formed into each ofthe first semiconductor material portion 16L and thegermanium-containing semiconductor material portion 17R by ionimplantation utilizing each sacrificial gate structure 40L, 40R as ionimplantation mask. After forming the spacer 34, source regions 36 s anddrain regions 36 d can be formed into each of the first semiconductormaterial portion 16L and the germanium-containing semiconductor materialportion 17R by ion implantation utilizing each sacrificial gatestructure 40L, 40R and spacer 34 as ion implantation mask. Thesemiconductor material of the first semiconductor material portion 16Land the germanium-containing semiconductor portion 17 that is locatedbeneath each sacrificial gate structure 40L, 40R and positioned betweenthe source region 36 s and the drain region 36 d is referred as achannel region 38.

Referring now to FIG. 11, there is illustrated the first exemplarysemiconductor structure of FIG. 10 after forming a dielectric material42 having an upper surface that is coplanar with an upper surface of thefirst and second sacrificial gate structures 40L, 40R. As such, theupper surface of each gate structure, i.e., the first and secondsacrificial gate structures 40L, 40R is exposed after forming thedielectric material 42.

In some embodiments, the dielectric material 42 may be composed of, forexample, silicon dioxide, undoped silicate glass (USG), fluorosilicateglass (FSG), borophosphosilicate glass (BPSG), a spin-on low-kdielectric layer, a chemical vapor deposition (CVD) low-k dielectriclayer or any combination thereof. The term “low-k” as used throughoutthe present application denotes a dielectric material that has adielectric constant of less than silicon dioxide. In another embodiment,a self-planarizing material such as a spin-on glass (SOG) or a spin-onlow-k dielectric material such as SiLK™ can be used as the dielectricmaterial 42. The use of a self-planarizing dielectric material asdielectric material 42 may avoid the need to perform a subsequentplanarizing step.

In one embodiment, the dielectric material 42 can be formed utilizing adeposition process including, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD), evaporation orspin-on coating. In some embodiments, particularly whennon-self-planarizing dielectric materials are used as dielectricmaterial 42, a planarization process or an etch back process follows thedeposition of the dielectric material. The thickness of the dielectricmaterial 42 that can be employed in the present application may varydepending on the type of dielectric material employed as well as themethod that was employed in forming the same. In one embodiment, thedielectric material 42 has a thickness from 80 nm to 500 nm. Otherthicknesses that are greater or lesser than the range provided above canalso be used for the dielectric material 42.

Referring now to FIG. 12, there is illustrated the first exemplarysemiconductor structure of FIG. 11 after removing the first sacrificialgate structure 40L providing a first gate cavity 44L in the areapreviously occupied by the first sacrificial gate structure 40L andremoving the second sacrificial gate structure 40R providing a secondgate cavity 44R in the area previously occupied by the secondsacrificial gate structure 40R. In accordance with the presentapplication, each first gate cavity 44L that is formed exposes a surfaceof the underlying first semiconductor portion 16L, while each secondgate cavity 44R that is formed exposed a surface of the underlyinggermanium-containing semiconductor portion 17R.

Each gate cavity 44L, 44R can be formed by removing each of thesacrificial gate material structures 40L, 40R from the structure. Eachsacrificial gate material structure 40L, 40R can be removed by etching.In one example, a reactive ion etch can be used to removal eachsacrificial gate material structure 40L, 40R.

Referring now to FIG. 13, there is illustrated the first exemplarysemiconductor structure of FIG. 12 after forming a first functional gatestructure 28L in the first gate cavity 44L and on a portion of the firstsemiconductor portion 16 and a second functional gate structure 28R inthe second gate cavity 44R and on a portion germanium-containingsemiconductor material portion 17R.

As in the previous embodiment of the present application, eachfunctional gate structure 28L, 28R includes a gate dielectric portion30L, 30R and a gate conductor portion 32L, 32R. The gate dielectricportions 30L, 30R include one of the gate dielectric materials mentionedin the previous embodiment of the present application and they can beformed as described above. Also, gate conductor portions 32L, 32Rinclude one of the gate conductor materials mentioned in the previousembodiment of the present application and they can be formed asdescribed above.

In some embodiments and as shown in the drawing, each gate dielectricportion 32L, 32R is U-shaped having a bottommost portion in directcontact with an upper surface of a corresponding semiconductor materialportion 16L or 17R and vertical portions that are located on exposedsidewalls of each spacer 34. Within each gate cavity 44L, 44R, the gatedielectric portion 30L, 30R surrounds the gate conductor portion 32L,32R. In another embodiment (not shown), each gate dielectric portion isnot U-shaped and thus lacks the vertical portions mentioned. In such anembodiment, the gate conductor portion that is formed atop thenon-U-shaped gate dielectric fills the remaining portion of the gatecavity and has outermost edges that directly contact a sidewall surfaceof each spacer. In another embodiment (not shown), some of the gatedielectric portion are U-shaped and other are not U-shaped.

Referring now to FIG. 14, there is illustrated a second exemplarysemiconductor structure including a first semiconductor fin 50L and asecond semiconductor fin 50R on a surface of a substrate in accordancewith another embodiment of the present application. Althoughsemiconductor fins are described and illustrated, semiconductornanowires can be formed in place of the semiconductor fins. Thesemiconductor fins and semiconductor nanowires can also be referred toherein as semiconductor material portions.

Also, and although a single first semiconductor fin 50L and a singlesecond semiconductor fin 50R are described and illustrated, a pluralityof first semiconductor fins and a plurality of second semiconductor finscan be formed. In some embodiments (not shown), a hard mask cap can bepresent atop each semiconductor 50L, 50R. In such an embodiment, a layerof hard mask material (not shown) such, as for example, silicon dioxideand/or silicon nitride, can be deposited on the exposed surface of thesubstrate i.e., semiconductor material layer 14, prior to forming eachsemiconductor fin. During the subsequent formation of the semiconductorfins, a portion of the hard mask provides a fin cap on a topmost surfaceof each fin. In such a structure, the gate dielectric material portionto be subsequently formed is present only along the vertical sidewallsof each semiconductor fin. In the embodiment that is illustrated, no fincap is present and as such, the gate dielectric material portion ispresent along the vertical sidewalls and on a topmost surface of eachsemiconductor fin.

The first semiconductor fin 50L and the second semiconductor fin 50R candefine different semiconductor device regions. For example, the firstsemiconductor fin 50L can define an area in which an n-FinFET can beformed, while the second semiconductor fin portion 50R can define anarea in which a p-FinFET can be formed.

As used herein, a “semiconductor fin” refers to a contiguous structureincluding a semiconductor material and including a pair of verticalsidewalls that are parallel to each other. As used herein, a surface is“vertical” if there exists a vertical plane from which the surface doesnot device by more than three times the root mean square roughness ofthe surface.

In one embodiment of the present application, each semiconductor fin50L, 50R has a height from 10 nm to 100 nm, and a width from 4 nm to 30nm. In another embodiment of the present application, each semiconductorfin 50L, 50R has a height from 15 nm to 50 nm, and a width from 5 nm to12 nm.

The semiconductor structure shown in FIG. 14 can be formed by firstproviding a semiconductor substrate comprising an upper semiconductormaterial surface. The semiconductor substrate that can be used in thisembodiment may include one of the semiconductor substrates mentionedabove. In one example, and as illustrated, the semiconductor substrateused in providing the structure shown in FIG. 14 includes asemiconductor-on-insulator substrate that contains a handle substrate10, an insulator layer 12 and a semiconductor material layer 14 that hasbeen processed into semiconductor fins.

In the illustrated embodiment of the present application, eachsemiconductor fin 50L, 50R has a bottommost surface that is located on asurface of the insulator layer 12. Thus, and in the illustratedembodiment, each semiconductor fin 50L, 50R is formed on a surface of asubstrate that is provided by insulator layer 12. In such an embodiment,an interface is present between the bottommost surface of eachsemiconductor fin 50L, 50R and an upper surface of the insulator layer12. In other embodiments of the present application (not shown), eachsemiconductor fin 50L, 50R has a bottommost surface that is located on anon-recessed surface of a bulk semiconductor substrate. In such anembodiment, no interface is present between the bottommost surface ofeach semiconductor fin 50L, 50R and the non-recessed surface of the bulksemiconductor substrate.

In the illustrated embodiment of the present application, eachsemiconductor fin 50L, 50R that is formed comprises a same semiconductormaterial as that of the semiconductor material layer 14. Eachsemiconductor fin 50L, 50R is spaced apart from its nearest neighboringsemiconductor fin(s). Also, each semiconductor fin 50L, 50R is orientedparallel to each other.

After providing the semiconductor structure, the semiconductor fins canbe formed by lithography and etching. Lithography can include forming aphotoresist (not shown) on the topmost surface of the layer of hard maskmaterial (or the topmost surface of the semiconductor substrate i.e.,semiconductor material layer 14, when no layer of hard mask material ispresent), exposing the photoresist to a desired pattern of radiation,and then developing the exposed photoresist with a conventional resistdeveloper to provide a patterned photoresist atop the semiconductorsubstrate. At least one etch is then employed which transfers thepattern from the patterned photoresist into the semiconductor materialportion of the semiconductor substrate. In the illustrated embodiment,at least one etch can be used to transfer the patterned from thepatterned photoresist material into the semiconductor material layer 14,utilizing the underlying insulator layer 12 as an etch stop. In oneembodiment, the etch used for pattern transfer may include a dry etchprocess such as, for example, reactive ion etching, plasma etching, ionbeam etching or laser ablation. In another embodiment, the etch used forpattern transfer may include a sidewall image transfer (SIT) process.After transferring the pattern into the semiconductor substrate, i.e.,semiconductor material layer 14, the patterned photoresist can beremoved utilizing a conventional resist stripping process such as, forexample, ashing.

Referring now to FIG. 15, there is illustrated the second exemplarysemiconductor structure of FIG. 14 after forming an oxygen impermeablehard mask 20 straddling the first semiconductor fin 50L, but not thesecond semiconductor fin 50R. The oxygen impermeable hard mask 20 thatcan be used in this embodiment of the present application includes oneof the oxygen impermeable materials mentioned in the previous embodimentof the present application. Also, the oxygen impermeable hard mask 20that can be used in this embodiment of the present application can beformed utilizing the technique mentioned in the previous embodiment ofthe present application in forming the structure shown in FIG. 3 of thepresent application. As is shown in FIG. 15, the oxygen impermeable hardmask 20 that can be used in this embodiment of the present applicationis present on sidewall surfaces and atop each first semiconductor fin50. In some embodiments and as shown in FIG. 15, a surface of the oxygenimpermeable hard mask 20 may contact an upper surface of insulator layer12.

Referring now to FIG. 16, there is illustrated the second exemplarysemiconductor structure of FIG. 15 after forming an epitaxial SiGe layer22 directly on an exposed surfaces of the second semiconductor fin 50L.The epitaxial SiGe layer 22 that can be used in this embodiment of thepresent application includes one of the SiGe materials mentioned in theprevious embodiment of the present application. Also, the epitaxial SiGelayer 22 that can be used in this embodiment of the present applicationcan be formed utilizing the technique mentioned in the previousembodiment of the present application in forming the structure shown inFIG. 4 of the present application. As is shown in FIG. 16, the epitaxialSiGe layer 22 that can be used in this embodiment of the presentapplication is present on sidewall surfaces and atop each secondsemiconductor fin 50R. In some embodiments and as shown in FIG. 16, asurface of the epitaxial SiGe layer 22 may contact an upper surface ofinsulator layer 12.

Referring now to FIG. 17, there is illustrated the second exemplarysemiconductor structure of FIG. 16 after forming an oxygen permeablehard mask 24. The oxygen permeable hard mask 24 that can be used in thisembodiment of the present application includes one of the oxygenpermeable capping materials mentioned in the previous embodiment of thepresent application. Also, the oxygen permeable hard mask 24 that can beused in this embodiment of the present application can be formedutilizing the technique mentioned in the previous embodiment of thepresent application in forming the structure shown in FIG. 5 of thepresent application.

Referring now to FIG. 18, there is illustrated the second exemplarysemiconductor structure of FIG. 17 after performing thermal condensationwhich converts the epitaxial SiGe layer 22 into a silicon oxide layer 26and converts the second semiconductor fin 50R into agermanium-containing semiconductor fin 51R. The thermal condensationprocess that is used in this embodiment is the same as the thermalcondensation process that was mentioned above in providing the structureshown in FIG. 6 of the present application.

Referring now to FIG. 19, there is illustrated the second exemplarysemiconductor structure of FIG. 18 after removing the oxygen permeablehard mask 24, the oxygen impermeable hard mask 20 and the silicon oxidelayer 26 from the structure. The removal of the oxygen permeable hardmask 24, the oxygen impermeable hard mask 20 and the silicon oxide layer26 from the structure shown in FIG. 18 is the same as described above inproviding the structure shown in FIG. 7 of the present application.

Referring now to FIG. 20, there is illustrated the second exemplarysemiconductor structure of FIG. 19 after forming a first gate structurestraddling the first semiconductor fin 50L and a second gate structurestraddling the germanium-containing semiconductor fin 51R. In theembodiment illustrated, the first gate structure is a first functionalgate structure 28L, and the second gate structure is a second functionalgate structure 28R. Each functional gate structure 28L, 28R may includea gate dielectric portion 30L, 30R and a gate conductor portion 32L,32R. The gate dielectric portions 30L, 30R and the gate dielectricportions 32L, 32 are the same as described in the previous embodiment ofthe present application. In some embodiments, the first functional gatestructure 28L is of a different polarity than the second functional gatestructure 28R. For example, the first functional gate structure 28L isan n-type FinFET that has a body portion that is comprised of the firstsemiconductor fin 50L, while the second functional gate structure 28R isa p-type FinFET that has a body portion comprised of the germaniumcontaining fin portion 51R. In some embodiments (not shown), at leastone of the gate structures is a sacrificial gate structure.

After providing the structure shown in FIG. 20, conventional FinFETprocessing including spacer formation and formation of source/drainregions within exposed portions of each semiconductor fin (not coveredby spacer material and a gate structure) can be performed providing aFinFET structure. In the drawings of the present application, thesource/drain regions would be located in a portion of each semiconductorfin 50L, 50R that runs into and out of the page of the drawing. When atleast one sacrificial gate structure, the sacrificial gate structure maybe replaced with a functional gate structure after formation of thespacer.

While the present application has been particularly shown and describedwith respect to various embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A method of forming a semiconductor structurecomprising: providing a structure including a first semiconductormaterial portion and a second semiconductor material portion located ona surface of a substrate; forming an oxygen impermeable hard maskdirectly on a surface of said first semiconductor material portion, butnot said second semiconductor material portion; epitaxially forming asilicon germanium layer directly on a surface of said secondsemiconductor material portion; forming an oxygen permeable hard maskover said first and second semiconductor material portions; performing athermal condensation process, wherein during said thermal condensationprocess said second semiconductor material portion is converted into agermanium-containing semiconductor material portion; and removing saidoxygen permeable hard mask and said oxygen impermeable hard mask fromsaid structure.
 2. The method of claim 1, wherein said providing saidstructure including said first semiconductor material portion and saidsecond semiconductor material portion comprises: providing asemiconductor-on-insulator substrate or a bulk semiconductor substrate;and forming at least one trench into a semiconductor material layer ofsaid semiconductor-on-insulator substrate or a bulk semiconductorsubstrate by lithography and etching.
 3. The method of claim 2, furthercomprising: filling said at least one trench with a trench dielectricmaterial; and performing a planarization process.
 4. The method of claim3, wherein said trench dielectric material has an upper surface that iscoplanar with an upper surface of each of said first semiconductormaterial portion and said second semiconductor material portion.
 5. Themethod of claim 1, wherein first semiconductor material portion and saidsecond semiconductor material portion are semiconductor fins, and saidproviding said structure comprises: providing asemiconductor-on-insulator substrate or a bulk semiconductor substrate;and forming said semiconductor fins by lithography and etching.
 6. Themethod of claim 1, wherein said forming said oxygen impermeable hardmask comprises: depositing an oxygen impermeable hard mask material overthe entire structure; and patterning said oxygen impermeable hard maskmaterial by lithography and etching.
 7. The method of claim 6, whereinsaid oxygen impermeable hard mask material is a dielectric nitridematerial.
 8. The method of claim 1, wherein said epitaxially formingsaid silicon germanium layer comprises an epitaxial deposition process.9. The method of claim 1, wherein said forming said oxygen permeablehard mask over said first and second semiconductor material portionscomprises: depositing an oxygen permeable hard mask material.
 10. Themethod of claim 9, wherein said oxygen permeable hard mask material is adielectric oxide material.
 11. The method of claim 1, wherein saidperforming said thermal condensation process comprises: heating thestructure at a temperature from 700° C. to 1300° C. and in an oxidizingambient.
 12. The method of claim 11, wherein said at least oneoxygen-containing gas is selected from the group consisting of O₂, NO,N₂O, ozone, and air.
 13. The method of claim 1, wherein during saidthermal condensation process said SiGe layer is converted to a siliconoxide layer.
 14. The method of claim 13, further comprising removingsaid silicon oxide layer after said thermal condensation process. 15.The method of claim 1, wherein said first semiconductor material andsecond semiconductor material portion comprise Si, and saidgermanium-containing semiconductor material portion comprises SiGe. 16.The method of claim 1, wherein said first semiconductor material andsecond semiconductor material portion comprise SiGe, and saidgermanium-containing semiconductor material portion comprises SiGehaving a higher content of germanium than said second semiconductormaterial portion.
 17. The method of claim 1, wherein said removing saidoxygen permeable hard mask and said oxygen impermeable hard mask fromsaid structure comprises one of etching and planarization.
 18. Themethod of claim 1, further comprising forming a first functionalstructure atop said first semiconductor material portion and a secondfunctional gate structure atop said germanium-containing semiconductormaterial portion.
 19. The method of claim 18, wherein said forming saidfirst functional gate structure and said second functional gatestructure comprises first forming a first sacrificial gate structure onsaid first semiconductor portion and a second sacrificial gate structureon said germanium-containing semiconductor material portion, andthereafter replacing said first sacrificial gate structure on said firstsemiconductor portion with said first functional gate structure andreplacing said second sacrificial gate structure on saidgermanium-containing semiconductor material portion with said secondfunctional gate structure.
 20. The method of claim 18, wherein saidfirst functional structure is an nFET and said second functional gatestructure is a pFET.